SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T RANS Z ORB?
Transient Voltage Suppressors
FEATURES
? Low profile package
? Ideal for automated placement
? Glass passivated chip junction
? Available in uni-directional and bi-directional
? 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 % (300 W above 78 V)
? Excellent clamping capability
DO-214AC ( S MA)
PRIMARY CHARACTERISTICS
? Very fast response time
? Low incremental surge resistance
? Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
V WM
5.0 V to 188 V
P PPM
I FSM
T J max.
400 W, 300 W
40 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMAJ10CA).
Electrical characteristics apply in both directions.
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
Peak pulse current with a waveform
(1)(2) (fig.
1)
P PPM
I PPM
400
See next table
W
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
I FSM
T J , T STG
40
- 55 to + 150
A
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2. Rating is 300 W above 78 V
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 26-Jan-12
1
Document Number: 88390
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SMBJ75CA-13 TVS BI-DIR 75V 600W SMB
SMBJ90-E3/52 TVS UNIDIRECT 600W 90V 10% SMB
SMCJ18CA TVS BIDIRECT 1500W 18V SMC
SMCJ5V0CA TVS BIDIRECT 1500W 5V SMC
SMCJ8.0CA DIODE TVS 8.0V 1500W BI 5% SMD
SMCJ8.5CA-13 TVS BI-DIR 8.5V 1500W SMC
SMD32 INDUSTRIAL PACK 32' SMD
SMDA24CDR2G TVS ARRAY 4CH BIDIRECTIONAL
相关代理商/技术参数
SMBJ30CA-E3/52 制造商:Vishay Semiconductors 功能描述:TVS DIODE 600W 30V DO-214AA
SMBJ30CA-E3/55 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ30CA-E3/5B 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ30CAE3/TR13 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 30V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 30V 5% BIDIR SMBJ
SMBJ30CAE352 制造商:Vishay Intertechnologies 功能描述:Diode TVS Single Bi-Dir 30V 600W 2-Pin SMB T/R
SMBJ30CAHE3/2C 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ30CAHE3/52 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ30CA-HE3/52 制造商:Vishay Semiconductors 功能描述: